Design Methodology of a 24 GHz 2.8 dB NF Low-Noise Amplifier Using 0.18 μm CMOS Technology and Slow Wave Transmission Lines
نویسندگان
چکیده
* Department of Electrical Engineering, Technion, Haifa, Israel ([email protected]) We present our design methodology of a low-noise amplifier (LNA) in 0.18 μm CMOS technology. A 24-GHz LNA having peak gain of 13.8 dB and record low minimum noise figure of 2.8 dB at 25.1 GHz was demonstrated. High quality factor slow wave transmission lines replaced all inductors in the circuit. The LNA IIP3 output power was –2.5 dBm and its power consumption 14 mW.
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تاریخ انتشار 2008